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Reference Material

The Sources of Innovation
by Hippel Von, Eric A Von Hippel  

0195094220.jpg             

 

Reaction and target design options for neutron source for neutron teletherapy

L Cranberg 1972 Phys. Med. Biol. 17 881   doi:10.1088/0031-9155/17/6/064

 

Evolution of integrated-circuit vacuum processes: 19591975

Robert K. Waits

Sunnyvale, California 94087-4426   or      

 

 

              

 

Microwave spectroscopy of high-L Rydberg states of neon

R. F. Ward, Jr.

Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556

W. G. Sturrus

Department of Physics, Youngstown State University, Youngstown, Ohio 44555

S. R. Lundeen

Department of Physics, Colorado State University, Ft. Collins, Colorado 80523

 

Ion implantation in silicon technology

Leonard Rubin and John Poate

Concept, operation and performance of the veeco VHC-120 high current ion implanter

William Scaife, Dennis Wagner and William Faul

Veeco Instruments, PO Box 17068, Austin, TX 78760, USA

Abstract

Veeco has developed, and is manufacturing, a new 120 keV high current ion implanter. The VHC-120 is characterized by a high degree of automation, including total computer control. A new, fixed focused beamline technology permits a small physical size. Improved vacuum systems and a unique dosimetry/scanning technique extend process control.

 

US Patents held by ai employees

Ozone generation apparatus and method 1979-Orr, Templeton, Keutzer

Ozone generation apparatus and method 1978-Orr, Templeton, Keutzer

Method and apparatus for extracting well-formed, high current ion beams from a plasma source 1976-Robinson, Seliger

Automatic end station for ion implantation system 1976-Templeton, Gault

Ion implantation control system 1985-Gault, Keutzer

 

 

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